BUW12AF 데이터 시트보기 (PDF) - Philips Electronics
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BUW12AF Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW12F; BUW12AF
handbook, full pagewidth
102
IC
(A) ICM max
10 IC max
1
10−1
10−2
δ = 0.01
tp =
20 µs
50 µs
II
100 µs
200 µs
500 µs
I
1 ms
2 ms
5 ms
10 ms
20 ms
DC
MGB916
10−3
BUW12F
BUW12AF
10−4
1
10
102
103 VCE (V) 104
Mounted without heatsink compound and 30 ±5 N force on centre of package.
Tmb < 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.2 Forward bias SOAR.
1997 Aug 14
5
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