AS7C33128PFS32A 데이터 시트보기 (PDF) - Alliance Semiconductor

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AS7C33128PFS32A

3.3V 128K X 32/36 pipeline burst synchronous SRAM

Alliance Semiconductor 

AS7C33128PFS32A

AS7C33128PFS36A

®

DC electrical characteristics

–200 –183

–166

–133

–100

Parameter Symbol

Test conditions

Min Max Min Max Min Max Min Max Min Max Unit

Input leakage

current1

|ILI| VDD = Max, VIN = GND to VDD – 2 – 2 – 2 – 2 – 2 µA

Output leakage

current

|ILO|

OE ≥ VIH, VDD = Max,

VOUT = GND to VDD

– 2 – 2 – 2 – 2 – 2 µA

Operating

power supply

current

ICC2

CE0 = VIL, CE1 = VIH, CE2 = VIL,

f = fMax, IOUT = 0 mA

–

570

–

540

–

475

–

425

–

325 mA

Standby power

supply current

Output voltage

ISB Deselected, f = fMax, ZZ ≤ VIL – 160 – 140 – 130 – 100 – 90

ISB1

Deselected, f = 0, ZZ ≤ 0.2V

all VIN ≤ 0.2V or ≥ VDD – 0.2V

– 30 – 30 –

30

–

30

–

30 mA

ISB2

Deselected, f = fMax, ZZ ≥ VDD – 0.2V

All VIN ≤ VIL or ≥ VIH

–

30

–

30

–

30

–

30

–

30

VOL

IOL = 8 mA, VDDQ = 3.465V

– 0.4 – 0.4 – 0.4 – 0.4 – 0.4

V

VOH IOH = –4 mA, VDDQ = 3.135V 2.4 – 2.4 – 2.4 – 2.4 – 2.4 –

1 LBO pin has an internal pull-up and input leakage = ±10 µa.

2 ICC given with no output loading. ICC increases with faster cycles times and greater output loading.

DC electrical characteristics for 2.5V I/O operation

–200 –183

–166

–133

–100

Parameter Symbol

Test conditions

Min Max Min Max Min Max Min Max Min Max Unit

Output leakage

current

|ILO|

OE ≥ VIH, VDD = Max,

VOUT = GND to VDD

–1 1 –1 1 –1 1 –1 1 –1 1 µA

Output voltage VOL

VOH

IOL = 2 mA, VDDQ = 2.65V

– 0.7 – 0.7 – 0.7 – 0.7 – 0.7

V

IOH = –2 mA, VDDQ = 2.35V 1.7 – 1.7 – 1.7 – 1.7 – 1.7 –

3/4/02; v.1.4

Alliance Semiconductor

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