BGA430(2001) 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

일치하는 목록

BGA430
(Rev.:2001)

Broad Band High Gain LNA

Infineon Technologies 

BGA430

Preliminary

Maximum Ratings

Parameter

Device voltage

Device current

Current into Pin In

Total power dissipation, TS < tbd°C1)

Junction temperature

Ambient temperature range

Storage temperature range

Thermal resistance: junction-soldering point

Symbol

VCC

ID

IB

Ptot

Tj

TA

TSTG

Rth JS

Notes:

All Voltages refer to GND-Node.

1) TS is measured on the emitter lead at the soldering point to the PCB

Value

6.5

35

tbd

165

150

-65 ... +150

-65 ... +150

tbd

Unit

V

mA

mA

mW

°C

°C

°C

K/W

Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 1)

VCC=5V, unless otherwise specified

Parameter

Symbol min. typ. max. Unit

Insertion power gain

f=0.9GHz

|S21|2

31

dB

f=2.15GHz

27.5

Noise figure (ZS=50Ω)

f=0.9GHz

NF

f=2.15GHz

2.3

dB

2.4

Output power at 1dB gain compression

ZL=50Ω

f=0.9GHz

f=2.15GHz

P-1dB

dBm

2

2.4

Output third order intercept point

ZS/L=50Ω

f=0.9GHz

f=2.15GHz

OIP3

dBm

15

14

Input return loss

f=0.9GHz

RLIn

>10

f=2.15GHz

>10

Output return loss

f=0.9GHz

RLOut

>10

f=2.15GHz

>10

Device current

ID

21.8

mA

Preliminary data sheet

5

2001-04-24

Share Link: