BF1211WR 데이터 시트보기 (PDF) - NXP Semiconductors.
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BF1211WR Datasheet PDF : 16 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1211; BF1211R; BF1211WR
50
handboIGok1, halfpage
(μA)
40
30
20
MDB837
(1)
(2)
(3)
(4)
(5)
10
0
0
2
4 VG2-S (V) 6
VDS = 5 V; Tj = 25 C; RG1 = 75 k (connected to VGG); see Fig.21.
(1) VGG = 5 V.
(2) VGG = 4.5 V.
(3) VGG = 4 V.
(4) VGG = 3.5 V.
(5) VGG = 3 V.
Fig.13 Gate 1 current as a function of gate 2
voltage; typical values.
hangdaboinok,
0
halfpage
reduction
(dB)
−10
MDB838
−20
−30
−40
−50
−60
0
1
2
3
4
VAGC (V)
VDS = 5 V; VGG = 5 V; RG1 = 75 k (connected to VGG);
see Fig.21; f = 50 MHz; Tamb = 25 C.
Fig.14 Typical gain reduction as a function of AGC
voltage.
handboo1k,2h0alfpage
Vunw
(dBμV)
110
MDB839
100
90
80
0
10
20
30
40
50
gain reduction (dB)
VDS = 5 V; VGG = 5 V; RG1 = 75 k (connected to VGG);
see Fig.21; f = 50 MHz; funw = 60 MHz; Tamb = 25 C.
Fig.15 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values.
20
handboIDok, halfpage
(mA)
16
MDB840
12
8
4
0
0
10
20
30
40
50
gain reduction (dB)
VDS = 5 V; VGG = 5 V; RG1 = 75 k (connected to VGG);
see Fig.21; f = 50 MHz; Tamb = 25 C.
Fig.16 Drain current as a function of gain
reduction; typical values.
2003 Dec 16
8
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