BF1211WR 데이터 시트보기 (PDF) - NXP Semiconductors.
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BF1211WR Datasheet PDF : 16 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1211; BF1211R; BF1211WR
20
handbook, halfpage
ID
(mA)
16
MDB833
12
8
4
0
0
10
20
30
40
50
IG1(μA)
VDS = 5 V; VG2-S = 4 V.
Tj = 25 C.
Fig.9 Drain current as a function of gate 1 current;
typical values.
16
handbook, halfpage
ID
(mA)
12
MDB834
8
4
0
0
1
2
3
4
5
VGG (V)
VDS = 5 V; VG2-S = 4 V; Tj = 25 C.
RG1 = 75 k (connected to VGG); see Fig.21.
Fig.10 Drain current as a function of gate 1 supply
voltage (VGG); typical values.
20
handbook, halfpage
ID
(mA)
16
12
8
MDB835
(1)
(2)
(3)
(4)
(5)
(6)
(7)
4
0
0
2
4
6
VGG = VDS (V)
VG2-S = 4 V; Tj = 25 C; RG1 connected to VGG; see Fig.21.
(1) RG1 = 47 k.
(2) RG1 = 56 k.
(3) RG1 = 68 k.
(4) RG1 = 75 k.
(5) RG1 = 82 k.
(6) RG1 = 100 k.
(7) RG1 = 120 k.
Fig.11 Drain current as a function of gate 1 (VGG)
and drain supply voltage; typical values.
20
handbook, halfpage
ID
(mA)
16
12
8
MDB836
(1)
(2)
(3)
(4)
(5)
4
0
0
2
4
6
VG2-S (V)
VDS = 5 V; Tj = 25 C; RG1 = 75 k (connected to VGG); see Fig.21.
(1) VGG = 5 V.
(2) VGG = 4.5 V.
(3) VGG = 4 V.
(4) VGG = 3.5 V.
(5) VGG = 3 V.
Fig.12 Drain current as a function of gate 2
voltage; typical values.
2003 Dec 16
7
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