INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD302
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -200mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB=B -0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB=B -0.3A
ICEO
Collector Cutoff Current
VCE= -30V; IB=B 0
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0; TC= 150℃
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -3A; VCE= -2V
fT
Current-Gain—Bandwidth Product
IC= -0.3A; VCE= -3V
-45
V
-1.0
V
-1.5
V
-1.0 mA
-1.0 mA
-5.0 mA
30
3
MHz
isc Website:www.iscsemi.cn
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