BD302 데이터 시트보기 (PDF) - Inchange Semiconductor

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BD302

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD302

DESCRIPTION

·DC Current Gain -

: hFE = 30(Min.)@ IC= -3A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -45V(Min.)

·Complement to Type BD301

APPLICATIONS

·Designed for audio output stages up to 25W, vertical

deflection circuits in color TV receivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-45

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-8

A

ICM

Collector Current-Peak

-12

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-2

A

55

W

150

℃

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX UNIT

2.3 ℃/W

isc Website：www.iscsemi.cn

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