BD2200GUL(2009) 데이터 시트보기 (PDF) - ROHM Semiconductor
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BD2200GUL Datasheet PDF : 5 Pages
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◇Electric characteristics (Unless otherwise specified, VIN = 3.3V, Ta = 25°C )
Parameter
Limits
Symbol
Unit
MIN
TYP
MAX
Operating current
IDD
-
20
30
μA
Standby current
ISTB
-
0.01
1
μA
EN input voltage
EN input current
VENH
1.2
-
VENL
-
-
IEN
-1.0
-
-
V
0.4
V
1.0
μA
ON resistance
RON
-
100
200
mΩ
Switch leakage current
ILEAK
-
0.01
1
μA
Output turn on rise time
TON1
-
1.0
2.0
ms
Output turn on time
TON2
-
1.2
2.4
ms
Output turn off fall time
TOFF1
-
2.5
5
μs
Output turn off time
TOFF2
-
Discharge ON resistance
RDISC
-
Discharge current
IDISC
-
4.5
9
μs
70
110
Ω
15
20
mA
2/4
Condition
VEN = 1.2V
VEN = 0V
High level input
Low level input
VEN = 0V or VEN = 1.2V
IOUT = 500mA
VEN = 0V, VOUT = 0V
RL = 10Ω
VOUT :10% → 90%
RL = 10Ω
VEN High → VOUT 90%
RL = 10Ω
VOUT :90% → 10%
RL = 10Ω
VEN Low → VOUT 10%
IOUT = -1mA, VEN = 0V
VOUT = 3.3V, VEN = 0V
◇ Switch output turn ON/OFF timing
◇ Test circuit
VEN
VOUT
50%
TON2
90%
10%
TON1
50%
TOFF2
90%
10%
TOFF1
VIN
VIN VOUT
VIN VOUT
EN
GND
VEN
CL RL
REV. B
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