BD2200GUL(2009) 데이터 시트보기 (PDF) - ROHM Semiconductor
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BD2200GUL Datasheet PDF : 5 Pages
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Structure
Product
Type
Feature
Silicon monolithic integrated circuit
Power management switch IC
BD2200GUL
Single channel of low on resistance (Typ = 100mΩ) N-channel MOSFET built in
Reverse-current protection when power switch off （Under operating conditions）
Output discharge circuit
◇Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Rating
Unit
Supply voltage
VDD
-0.3 ～ 6.0
V
VIN voltage
VIN
-0.3 ～ 6.0
V
EN voltage
VEN
-0.3 ～ VDD + 0.3
V
VOUT voltage
VOUT
-0.3 ～ 6.0
V
Storage temperature
TSTG
-55 ～ 150
℃
Power dissipation
Pd
575*1
mW
*1 Mounted on 50mm * 58mm * 1.75mm glass-epoxy PCB. Derating: 4.6mW/℃ above Ta = 25℃.
* This product is not designed for protection against radioactive rays.
◇Operating conditions
Parameter
Switch input voltage
Operating temperature
Output current
Symbol
MIN
TYP
MAX
Unit
VIN
2.7
3.3
5.5
V
TOPR
-25
25
85
°C
ILO
0
-
500
mA
REV. B
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