AS5C1008 데이터 시트보기 (PDF) - Austin Semiconductor
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AS5C1008 Datasheet PDF : 9 Pages
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Austin Semiconductor, Inc.
SRAM
AS5C1008
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55oC<TA<+125oC or -40oC to +85oC; Vcc = 5V+10%)
-15
DESCRIPTION
SYMBOL1 MIN MAX
-20
MIN MAX
-25
MIN MAX
UNIT
READ CYCLE
Read Cycle Time
tRC
15
20
25
ns
Address Access Time
tAA
15
20
25
ns
Chip Enable Access Time
tACE
15
20
25
ns
Output Hold from Address Change
tOH
3
3
3
ns
Chip Enable to Output in Low-Z
tLZCE
3
3
3
ns
Chip Disable to Output in High-Z
tHZCE
7
8
10
ns
Output Enable Access Time
tAOE
7
7
10
ns
Output Enable to Output in Low-Z
tLZOE
0
0
0
ns
Output Disable to Output in High-Z
WRITE CYCLE
tHZOE
7
8
10
ns
Write Cycle Time
tWC
15
20
25
ns
Chip Enable to End of Write
tCW
12
15
20
ns
Address Valid to End of Write
tAW
12
15
20
ns
Address Set-up Time
tAS
0
0
0
ns
Address Hold from End of Write
tAH
0
0
0
ns
Write Pulse Width (OE\ > VIH)
tWP
12
15
20
ns
Data Set-up Time
tDS
8
10
15
ns
Data Hold Time
tDH
0
0
0
ns
Write Disable to Output in Low-Z
tLZWE
5
5
5
ns
Write Enable to Output in High-Z
tHZWE
7
9
10
ns
NOTE: 1. tLZCE, tLZWE, tHZCE, tLZOE, and tHZOEare simulated values.
AS5C1008
Rev. 3.6 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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