BT169B(2014) 데이터 시트보기 (PDF) - NXP Semiconductors.
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BT169B Datasheet PDF : 14 Pages
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NXP Semiconductors
BT169B
SCR
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 7
IL
latching current
VD = 12 V; IG = 0.5 mA; RGK = 1 kΩ;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; RGK = 1 kΩ; Tj = 25 °C;
Fig. 9
VT
on-state voltage
IT = 1.2 A; Tj = 25 °C; Fig. 10
VGT
gate trigger voltage
VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 11
VD = 200 V; IT = 10 mA; Tj = 125 °C;
Fig. 11
ID
off-state current
VD = 200 V; Tj = 125 °C; RGK = 1 kΩ
IR
reverse current
VR = 200 V; Tj = 125 °C; RGK = 1 kΩ
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 134 V; Tj = 125 °C; RGK = 1 kΩ;
(VDM = 67% of VDRM); exponential
waveform; Fig. 12
VDM = 134 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12
tgt
gate-controlled turn-on ITM = 2 A; VD = 200 V; IG = 10 mA; dIG/
time
dt = 0.1 A/µs; Tj = 25 °C
tq
commutated turn-off VDM = 134 V; Tj = 125 °C; ITM = 1.6 A;
time
VR = 35 V; (dIT/dt)M = 30 A/µs; dVD/
dt = 2 V/µs; RGK = 1 kΩ; (VDM = 67% of
VDRM)
Min Typ Max Unit
-
50
200 µA
-
2
6
mA
-
2
5
mA
-
1.25 1.7 V
-
0.5 0.8 V
0.2 0.3 -
V
-
0.05 0.1 mA
-
0.05 0.1 mA
500 800 -
V/µs
-
25
-
V/µs
-
2
-
µs
-
100 -
µs
BT169B
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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