BT169B(2014) 데이터 시트보기 (PDF) - NXP Semiconductors.

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BT169B
(Rev.:2014)

SCR

NXP Semiconductors. 

NXP Semiconductors

BT169B

SCR

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

VDRM

repetitive peak off-state voltage

VRRM

repetitive peak reverse voltage

IT(AV)

average on-state current

half sine wave; Tlead ≤ 83 °C; Fig. 1

IT(RMS)

RMS on-state current

half sine wave; Tlead ≤ 83 °C; Fig. 2;

Fig. 3

ITSM

non-repetitive peak on-state half sine wave; Tj(init) = 25 °C;

current

tp = 10 ms; Fig. 4; Fig. 5

half sine wave; Tj(init) = 25 °C;

tp = 8.3 ms

I2t

I2t for fusing

tp = 10 ms; SIN

dIT/dt

rate of rise of on-state current IT = 2 A; IG = 10 mA; dIG/dt = 100 mA/

µs

IGM

peak gate current

VRGM

peak reverse gate voltage

PGM

peak gate power

PG(AV)

average gate power

over any 20 ms period

Tstg

storage temperature

Tj

junction temperature

Min Max Unit

-

200 V

-

200 V

-

0.5 A

-

0.8 A

-

8

A

-

9

A

-

0.32 A2s

-

50

A/µs

-

1

A

-

5

V

-

2

W

-

0.1 W

-40 150 °C

-

125 °C

0.8

Ptot

(W)

0.6

1.9

2.2

001aab446 77

a = 1.57

Tlead(max)

(°C)

89

2.8

0.4

4

0.2

conduction form

angle factor

(degrees) a

30

4

60

2.8

90

2.2

α

120

1.9

180

1.57

0

0

0.1

0.2

0.3

0.4

0.5

IT(AV) (A)

α = conduction angle

a = form factor = IT(RMS) / IT(AV)

Fig. 1. Total power dissipation as a function of average on-state current; maximum values

101

113

125

0.6

BT169B

Product data sheet

All information provided in this document is subject to legal disclaimers.

19 March 2014

© NXP Semiconductors N.V. 2014. All rights reserved

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