2SJ350 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SJ350 Datasheet PDF : 9 Pages
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2SJ350
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
Pulse Test
–4
–3
I D = –5 A
–2
–2 A
–1
–1 A
0
–4 –8 –12 –16 –20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
2
1
VGS = –4 V
0.5
–10 V
0.2
0.1
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6
1.2
0.8 VGS = –4 V
I D = –3 A
–2 A
–1 A
–3 A
–1, –2 A
0.4
–10 V
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20 V DS = –10 V
Pulse Test
10
5
2
75 °C
25 °C
Tc = –25 °C
1
0.5
–0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I D (A)
4
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