2SJ350 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SJ350 Datasheet PDF : 9 Pages
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2SJ350
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for switching regulator, DC-DC converter
Outline
TO-220FM
ADE-208-138
1st. Edition
D
12 3
1. Gate
G
2. Drain
3. Source
S
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