C4313 데이터 시트보기 (PDF) - Inchange Semiconductor
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C4313 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4313
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 1A
ICBO
Collector Cutoff Current
At rated Voltage
ICEO
Collector Cutoff Current
At rated Voltage
IEBO
Emitter Cutoff Current
At rated Voltage
hFE-1
DC Current Gain
IC= 5A; VCE= 2V
hFE-2
DC Current Gain
IC= 1mA; VCE= 2V
fT
Current-Gain—Bandwidth Product IC= 1A; VCE= 10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5A, IB1= -IB2= 1A;
RL= 50Ω; VBB2= 4V;
VCC= 250V
MIN TYP. MAX UNIT
800
V
1.5
V
2.5
V
100 μA
200 μA
100 μA
7
5
7
MHz
0.5 μs
3.0 μs
0.5 μs
isc Website：www.iscsemi.cn
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