C4313 데이터 시트보기 (PDF) - Inchange Semiconductor
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C4313 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V(Min)
·Fast Switching speed
APPLICATIONS
·Color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IBB
Base Current-Continuous
4
A
IBM
Base Current-Peak
PT
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
8
A
100
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.2 ℃/W
isc Product Specification
2SC4313
isc Website：www.iscsemi.cn
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