2SA877 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SA877 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA877
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -3A ; VCE= -4V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IE= 0.5A; VCE= -12V
MIN TYP. MAX UNIT
-80
V
-2.0 V
-0.1 mA
-0.1 mA
30
255
pF
15
MHz
isc Website：www.iscsemi.cn
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