2SA877 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SA877 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA877
DESCRIPTION
·High Power Dissipation-
: PC= 100W(Max.)@TC=25℃
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.)
APPLICATIONS
·Designed for power amplifier and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature
-80
V
-6
V
-10
A
-4
A
100
W
150
℃
-65~150 ℃
isc Website：www.iscsemi.cn
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