H20R1202 데이터 시트보기 (PDF) - Infineon Technologies

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H20R1202

Reverse Conducting IGBT with monolithic body diode

Infineon Technologies 

1000ns

IHW20N120R2

Soft Switching Series

td(off)

1000ns

td(off)

100ns

tf

100ns

tf

0A

10A

20A

30A

Figure 9.

IC, COLLECTOR CURRENT

Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, RG=15Ω,

Dynamic test circuit in Figure E)

10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ=175°C, VCE=600V,

VGE=0/15V, IC=20A,

Dynamic test circuit in Figure E)

100ns

td(off)

6V

tf

5V

4V

3V

max.

typ.

min.

10ns

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=20A, RG=29Ω,

Dynamic test circuit in Figure E)

2V

-50°C

0°C

50°C

100°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as a

function of junction temperature

(IC = 0.5mA)

Power Semiconductors

6

Rev. 1.2 May 06

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