IHW20N120R2
Soft Switching Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
Unit
0.45
K/W
0.45
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Symbol
Conditions
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=500µA
VGE = 15V, IC=20A
Tj=25°C
Tj=125°C
Tj=175°C
VGE=0V, IF=20A
Tj=25°C
Tj=125°C
Tj=175°C
IC=0.5mA,
VCE=VGE
VCE=1200V,
VGE=0V
Tj=25°C
Tj=175°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=20A
min.
1200
-
-
-
-
-
-
5.1
-
-
-
-
Value
Typ.
-
1.55
1.75
1.85
1.45
1.6
1.65
5.8
-
-
-
14.5
none
Unit
max.
-V
1.75
-
-
1.7
-
-
6.4
µA
5
2500
100 nA
-S
Ω
Power Semiconductors
2
Rev. 1.2 May 06