IKW25N120T2 데이터 시트보기 (PDF) - Infineon Technologies
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IKW25N120T2
Infineon Technologies
IKW25N120T2 Datasheet PDF : 15 Pages
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IKW25N120T2
TrenchStop® 2nd generation Series
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
-
Output capacitance
Coss
VGE=0V,
-
Reverse transfer capacitance
Crss
f=1MHz
-
Gate charge
QGate
VCC=960V, IC=25A
-
VGE=15V
Internal emitter inductance
LE
-
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC10s
-
VCC = 600V,
Tj,start = 25C
Tj,start = 175C
1600
155
90
120
13
150
115
- pF
-
-
- nC
- nH
-A
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=600V,IC=25A,
VGE=0/15V,
RG=16.4,
L2)=105nH,
C2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25C,
VR=600V, IF=25A,
diF/dt=1050A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
27
20
265
95
1.55
1.35
2.9
195
2.05
20
475
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
µC
A
- A/s
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
3
Rev. 2.2 12.06.2013
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