IKW25N120T2 데이터 시트보기 (PDF) - Infineon Technologies

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IKW25N120T2

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode

Infineon Technologies 

IKW25N120T2

TrenchStop® 2nd generation Series

V

CE

600V

400V

45A

45A

I

C

30A

30A

600V

400V

200V

15A

I

C

0V

0A

0us

0.4us

0.8us

1.2us

t, TIME

Figure 21. Typical turn on behavior

(VGE=0/15V, RG=16.4Ω, Tj = 175C,

Dynamic test circuit in Figure E)

15A

200V

V

CE

0A

0V

0us

0.4us

0.8us

1.2us

t, TIME

Figure 22. Typical turn off behavior

(VGE=15/0V, RG=16.4Ω, Tj = 175C,

Dynamic test circuit in Figure E)

D=0.5

10-1K/W 0.2

0.1

0.05

10-2K/W

R,(K/W)

0.02

0.01

0.083

0.116

0.213

0.014

single pulse

R1

, (s)

2.77*10-4

3.21*10-3

1.73*10-2

2.77*10-1

R2

C1=1/R1 C2=2/R2

10-3K/W

10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 23. IGBT transient thermal resistance

(D = tp / T)

D=0.5

0.2

10-1K/W 0.1

0.05

10-2K/W

R,(K/W)

0.198

0.301

0.287

0.019

, (s)

3.31*10-4

3.33*10-3

1.68*10-2

2.49*10-1

0.02 R1

R2

0.01

single pulseC1=1/R1 C2=2/R2

10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 24. Diode transient thermal

impedance as a function of pulse

width

(D=tP/T)

IFAG IPC TD VLS

10

Rev. 2.2 12.06.2013

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