GP2401ESM18 데이터 시트보기 (PDF) - Dynex Semiconductor

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GP2401ESM18

Hi-Reliability Single Switch Low VCE(SAT) IGBT Module

Dynex Semiconductor 

GP2401ESM18

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise.

Symbol

Parameter

ICES

Collector cut-off current

I

GES

VGE(TH)

VCE(sat)

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

I

Diode forward current

F

IFM

Diode maximum forward current

VF

Diode forward voltage

C

Input capacitance

ies

LM

Module inductance

Test Conditions

Min. Typ. Max. Units

VGE = 0V, VCE = VCES

-

VGE = 0V, VCE = VCES, Tcase = 125˚C

-

VGE = ±20V, VCE = 0V

-

IC = 120mA, VGE = VCE

4.5

V = 15V, I = 2400A

-

GE

C

VGE = 15V, IC = 2400A, , Tcase = 125˚C

-

DC

-

-

3

mA

-

100 mA

-

12 µA

5.5

6.5

V

2.6

3.2

V

3.3

4

V

-

2400 A

tp = 1ms

I = 2400A

F

IF = 2400A, Tcase = 125˚C

VCE = 25V, VGE = 0V, f = 1MHz

-

-

-

4800 A

-

2.2

2.5

V

-

2.3

2.6

V

-

270

-

nF

-

10

-

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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