GP2401ESM18 데이터 시트보기 (PDF) - Dynex Semiconductor

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GP2401ESM18

Hi-Reliability Single Switch Low VCE(SAT) IGBT Module

Dynex Semiconductor 

GP2401ESM18

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety

precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Tcase = 25˚C unless stated otherwise

Symbol

Parameter

Test Conditions

VCES

VGES

IC

I

C(PK)

Pmax

Visol

Collector-emitter voltage

VGE = 0V

Gate-emitter voltage

-

Continuous collector current

Tcase = 80˚C for Tj = 125˚C

Peak collector current

1ms, Tcase = 115˚C

Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C

Isolation voltage

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Max. Units

1800 V

±20 V

2400 A

4800 A

20.8 kW

4000 V

THERMAL AND MECHANICAL RATINGS

Symbol

Parameter

Test Conditions

Rth(j-c)

Thermal resistance - transistor

Continuous dissipation -

junction to case

Rth(j-c)

Thermal resistance - diode

Continuous dissipation -

junction to case

R

th(c-h)

Thermal resistance - case to heatsink (per module) Mounting torque 5Nm

(with mounting grease)

Tj

Junction temperature

Transistor

Diode

T

Storage temperature range

stg

-

Screw torque

-

Mounting - M6

Electrical connections - M4

Electrical connections - M8

Min. Max. Units

-

6 ˚C/kW

-

14 ˚C/kW

-

6 ˚C/kW

-

150 ˚C

-

125 ˚C

–40 125 ˚C

-

5

Nm

-

2

Nm

-

10 Nm

2/9

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

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