2SC4702 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SC4702

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC4702

Collector to Emitter Saturation Voltage vs.

Collector Current

10

IC/IB = 10

Pulse Test

1.0

Ta = 75°C

25

–25

0.1

1,000

Gain Bandwidth Product vs.

Collector Current

VCE = 6 V

100

10

0.01

0.1

1.0

10

100

Collector Current IC (mA)

1

0.1

1.0

10

100

Collector Current IC (mA)

Collector Output Capacitance vs.

Collector to Base Voltage

100

f = 1 MHz

IE = 0

10

1.0

0.1

0.1

1.0

10

100

Collector to Base Voltage VCB (V)

4

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