2SC4702 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SC4702

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC4702

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

300

V

300

V

5

V

50

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V(BR)CBO

300

—

—

V

voltage

IC = 10 µA, IE = 0

Collector to emitter breakdown V(BR)CEO 300

—

—

V

voltage

IC = 1 mA, RBE = ∞

Emitter to base breakdown

voltage

V(BR)EBO

5

—

—

V

IE = 10 µA, IC = 0

Collector cutoff current

I CBO

—

—

0.1 µA

VCB = 250 V, IE = 0

Collector to emitter saturation VCE(sat) —

—

0.5 V

voltage

IC = 30 mA, IB = 3 mA

DC current transfer ratio

hFE

60

—

150

VCE = 6 V, IC = 2 mA

Gain bandwidth product

fT

—

80

—

MHz VCE = 6 V, IC = 5 mA

Collector output capacitance Cob

—

1.5 —

pF

VCB = 10 V, IE = 0, f = 1 MHz

2

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