RB521S30,115 데이터 시트보기 (PDF) - NXP Semiconductors.
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RB521S30,115 Datasheet PDF : 12 Pages
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NXP Semiconductors
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1 0.05
0.02
10
0
0.01
RB521S30
200 mA low VF MEGA Schottky barrier rectifier
006aab710
1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0
0.01
006aab711
1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
RB521S30_1
Product data sheet
Rev. 01 — 6 October 2009
© NXP B.V. 2009. All rights reserved.
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