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MC74HCT541A
ON Semiconductor
MC74HCT541A Datasheet PDF : 8 Pages
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MC74HCT541A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ICC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ PD
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
– 0.5 to VCC + 0.5 V
– 0.5 to VCC + 0.5 V
± 20
mA
DC Output Current, per Pin
± 35
mA
DC Supply Current, VCC and GND Pins
± 75
mA
Power Dissipation in Still Air
Plastic DIP†
750
mW
SOIC Package†
500
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Tstg Storage Temperature Range
– 65 to + 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TL Lead Temperature, 1 mm from Case for 10 Seconds
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Plastic DIP or SOIC Package
260
*Maximum Ratings are those values beyond which damage to the device may occur.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
v v Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC DC Supply Voltage (Referenced to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin, Vout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tr, tf
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature Range, All Package Types
Input Rise/Fall Time (Figure 1)
Min Max Unit
4.5 5.5 V
0 VCC V
– 55 + 125 _C
0 500 ns
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Condition
VCC
Guaranteed Limit
V –55 to 25°C ≤85°C ≤125°C Unit
VIH
Minimum High–Level Input
Voltage
Vout = 0.1V or VCC – 0.1V
|Iout| ≤ 20µA
4.5
2.0
5.5
2.0
2.0
2.0
V
2.0
2.0
VIL
Maximum Low–Level Input
Voltage
Vout = 0.1V or VCC – 0.1V
|Iout| ≤ 20µA
4.5
0.8
5.5
0.8
0.8
0.8
V
0.8
0.8
VOH
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout| ≤ 20µA
4.5
4.4
5.5
5.4
4.4
4.4
V
5.4
5.4
Vin = VIH or VIL |Iout| ≤ 6.0mA 4.5
3.98
3.84 3.70
VOL
Maximum Low–Level Output
Voltage
Vin = VIH or VIL
|Iout| ≤ 20µA
4.5
0.1
5.5
0.1
0.1
0.1
V
0.1
0.1
Vin = VIH or VIL |Iout| ≤ 6.0mA 4.5
0.26
0.33 0.40
Iin
Maximum Input Leakage Current Vin = VCC or GND
5.5
±0.1
±1.0
±1.0
µA
IOZ
Maximum Three–State Leakage Output in High Impedance State
5.5
±0.5
±5.0 ±10.0 µA
Current
Vin = VIL or VIH
Vout = VCC or GND
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0µA
5.5
4
40
160
µA
∆ICC
Additional Quiescent Supply
Current
Vin = 2.4V, Any One Input
Vin = VCC or GND, Other Inputs
≥ –55°C
25 to 125°C
Iout = 0µA
5.5
2.9
2.4
mA
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
2. Total Supply Current = ICC + Σ∆ICC.
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