MAX17491 데이터 시트보기 (PDF) - Maxim Integrated

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MAX17491

Single-Phase Synchronous MOSFET Driver

Maxim Integrated 

Single-Phase Synchronous MOSFET Driver

PWM SKIP

+5V BIAS

SUPPLY

CVDD

1.0μF

PWM

DH

SKIP

BST

MAX17491 LX

VDD

DL

GND

PAD

NH

CBST

0.22μF

CIN

2x 10μF

L1

0.36μH

NL

DL

INPUT (VIN)

OUTPUT (VOUT)

COUT

2x 330μF

6mΩ

Figure 3. Typical MOSFET-Driver Application Circuit

Table 1. Typical Components

DESIGNATION

NH

NL

BST Capacitor (CBST)

Schottky Diode

Inductor (L1)

Output Capacitors (COUT)

Input Capacitors (CIN)

QTY

1 per phase

1–2 per phase

1 per phase

Optional

1 per phase

1–2 per phase

1–2 per phase

COMPONENT SUPPLIERS

Siliconix Si4860DY

Siliconix Si4336DY

0.1µF or 0.22µF ceramic capacitor

3A, 40V Schottky diode

0.36µH, 26A, 0.9mΩ power inductor

330µF, 6mΩ per phase

10µF, 25V X5R ceramic capacitors

Detailed Description

The MAX17491 single-phase gate driver, along with the

MAX8736, MAX8786, or MAX17030 multiphase con-

trollers, provide flexible multiphase CPU core-voltage

supplies. The low driver resistance allows up to 7A out-

put peak current. Each MOSFET driver in the

MAX17491 can drive 3nF capacitive loads with only 9ns

propagation delay and 4ns/8ns (typ) fall/rise times,

allowing operation up to 3MHz per phase. Larger

capacitive loads are allowable but result in longer prop-

agation and transition times. Adaptive dead-time con-

trol prevents shoot-through currents and maximizes

converter efficiency while allowing operation with a vari-

ety of MOSFETs and PWM controllers. An input under-

voltage-lockout (UVLO) circuit allows proper power-on

sequencing.

PWM Input

The drivers for the MAX17491 are disabled—DH and

DL pulled low—if the PWM input remains in the midlevel

window for at least 300ns (typ). Once the PWM signal is

driven high or low, the MAX17491 immediately exits the

low-current shutdown state and resumes active opera-

tion. Outside the shutdown state, the drivers are

enabled based on the rising and falling thresholds

specified in the Electrical Characteristics.

MOSFET Gate Drivers (DH, DL)

The high-side driver (DH) has a 0.9Ω sourcing resis-

tance and 0.7Ω sinking resistance, resulting in 2.2A

peak sourcing current and 2.7A peak sinking current

with a 5V supply voltage. The low-side driver (DL) has a

typical 0.7Ω sourcing resistance and 0.3Ω sinking

resistance, yielding 2.7A peak sourcing current and 8A

peak sinking current. This reduces switching losses,

making the MAX17491 ideal for both high-frequency

and high-output-current applications.

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