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MAX17480GTL

AMD 2-/3-Output Mobile Serial VID Controller

Maxim Integrated 

AMD 2-/3-Output Mobile Serial

VID Controller

ELECTRICAL CHARACTERISTICS (continued)

(Circuit of Figure 2, VIN = 12V, VCC = VDD = VIN3 = SHDN = PGD_IN = 5V, VDDIO = 1.8V, OPTION = GNDS_ = AGND = PGND,

FBDC_ = FBAC_ = OUT3 = CSP_ = CSN_ = 1.2V, all DAC codes set to the 1.2V code, TA = 0°C to +85°C, unless otherwise noted.

Typical values are at TA = +25°C.)

PARAMETER

FAULT DETECTION

Output Overvoltage Trip

Threshold

(SMPS1 and SMPS2 Only)

Output Overvoltage Fault

Propagation Delay (SMPS1 and

SMPS2 Only)

Output Undervoltage Protection

Trip Threshold

Output Undervoltage Fault

Propagation Delay

PWRGD Threshold

SYMBOL

CONDITIONS

MIN TYP MAX UNITS

PWM mode

250 300 350

mV

Skip mode and output

Measured at

has not reached the

1.80 1.85 1.90

VOVP_

FBDC_, rising

edge

regulation voltage

V

Minimum OVP

0.8

threshold

tOVP FBDC_ forced 25mV above trip threshold

10

µs

VUVP

Measured at FBDC_ or OUT3 with respect

to unloaded output voltage

-450

-400

-350

mV

tUVP FBDC_ forced 25mV below trip threshold

10

µs

Measured at

FBDC_ or OUT3

with respect to

unloaded output

voltage,15mV

hysteresis (typ)

Lower threshold,

falling edge

(undervoltage)

Upper threshold,

rising edge

(overvoltage)

-350 -300 -250

mV

+150 +200 +250

PWRGD Propagation Delay

tPWRGD

FBDC_ or OUT3 forced 25mV outside the

PWRGD trip thresholds

10

µs

PWRGD, Output Low Voltage

PWRGD Leakage Current

IPWRGD

ISINK = 4mA

High state, PWRGD forced to 5.5V,

TA = +25°C

0.4

V

1

µA

PWRGD Startup Delay and

Transition Blanking Time

tBLANK

Measured from the time when FBDC_ and

OUT3 reach the target voltage

20

µs

VRHOT Trip Threshold

VRHOT Delay

VRHOT, Output Low Voltage

VRHOT Leakage Current

THRM Input Leakage

Thermal-Shutdown Threshold

GATE DRIVERS

Measured at THRM, with respect to VCC,

29.5

30

30.5

%

falling edge, 115mV hysteresis (typ)

tVRHOT

THRM forced 25mV below the VRHOT trip

threshold, falling edge

10

µS

ISINK = 4mA

High state, VRHOT forced to 5V, TA = +25°C

0.4

V

1

µA

TA = +25°C

-100

+100

nA

TSHDN Hysteresis = 15°C

+160

°C

DH_ Gate-Driver On-Resistance

RON(DH_)

BST_ - LX_ forced

to 5V (Note 4)

High state (pullup)

Low state (pulldown)

0.9

2.5

0.7

2.5

DL_ Gate-Driver On-Resistance

DL_, high state

RON(DL_)

DL_, low state

0.7

2.0

0.25 0.6

_______________________________________________________________________________________ 5

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