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IRFD1Z0

0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs

Intersil 

Semiconductor

July 1998

IRFD1Z0, IRFD1Z1,

IRFD1Z2, IRFD1Z3

0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm,

N-Channel Power MOSFETs

Features

• 0.4A and 0.5A, 60V and 100V

• rDS(ON) = 2.4Ω and 3.2Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Description

These are N-Channel enhancement mode silicon gate

power field effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

They can be operated directly from integrated circuits.

Formerly developmental type TA17451.

Symbol

D

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFD1Z0

HEXDIP

IRFD1Z0

IRFD1Z1

HEXDIP

IRFD1Z1

IRFD1Z2

HEXDIP

IRFD1Z2

IRFD1Z3

HEXDIP

IRFD1Z3

NOTE: When ordering, use the entire part number.

G

S

Packaging

HEXDIP

GATE

DRAIN

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright © Harris Corporation 1998

5-1

File Number 2313.1

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