FDB2532 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDB2532 Datasheet PDF : 11 Pages
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Typical Characteristics TA = 25°C unless otherwise noted
200
STARTING TJ = 25oC
100
STARTING TJ = 150oC
10
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1
0.001
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7515 and AN7517
Figure 5. Unclamped Inductive Switching
Capability
180
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
150 VDD = 15V
120
TJ = 175oC
90
60
TJ = 25oC
30
TJ = -55oC
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
180
VGS = 10V
VGS = 7V
150
VGS = 6V
120
90
TC = 25oC
60
VGS = 5V
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Saturation Characteristics
18
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
17
VGS = 6V
16
15
VGS = 10V
14
13
0
20
40
60
80
ID, DRAIN CURRENT (A)
Figure 8. Drain to Source On Resistance vs Drain
Current
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
1.4
VGS = VDS, ID = 250µA
1.2
2.0
1.0
1.5
0.8
1.0
0.5
-80
VGS = 10V, ID =33A
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
0.6
0.4
-80
-40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
©2002 Fairchild Semiconductor Corporation
FDB2532 / FDP2532 / FDI2532 Rev. A1
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