Table 14
13 Avalanche characteristics
OptiMOS™ Power-MOSFET
BSC0908NS
Electrical characteristics diagrams
14 Typ. gate charge
IAS=f(tAV); RGS=25 parameter: Tj(start)
Table 15
15 Drain-source breakdown voltage
VGS=f(Qgate); ID=30 A pulsed; parameter: VDD
16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
Final Data Sheet
8
3.1, 2010-10-18