BSC0908NS 데이터 시트보기 (PDF) - Infineon Technologies

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BSC0908NS

n-Channel Power MOSFET

Infineon Technologies 

OptiMOS™ Power-MOSFET

BSC0908NS

Electrical characteristics diagrams

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Electrical characteristics diagrams

Table 8

1 Power dissipation

2 Drain current

Ptot = f(TC)

Table 9

3 Safe operating area TC=25 °C

ID=f(TC); parameter:VGS

4 Max. transient thermal impedance

ID=f(VDS); Tj=25 °C; D=0; parameter: Tp

Final Data Sheet

Z(thJC)=f(tp); parameter: D=tp/T

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3.1, 2010-10-18

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