AOP600L 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor

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AOP600L

Complementary Enhancement Mode Field Effect Transistor

Alpha and Omega Semiconductor 

AOP600

n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

30

V

IDSS

Zero Gate Voltage Drain Current

VDS=24V, VGS=0V

TJ=55°C

1

µA

5

IGSS

Gate-Body leakage current

VDS=0V, VGS=±20V

100 nA

VGS(th) Gate Threshold Voltage

VDS=VGS ID=250µA

1

1.8

3

V

ID(ON)

On state drain current

VGS=10V, VDS=5V

30

A

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=7.5A

TJ=125°C

22.6 28

mΩ

VGS=4.5V, ID=6.0A

33

43 mΩ

gFS

Forward Transconductance

VDS=5V, ID=7.5A

12

16

S

VSD

Body Diode Forward Voltage

IS=1A, VGS=0V

0.76 1

V

IS

Maximum Body-DiodeContinuous Current

4

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance.

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

680 820 pF

102

pF

77

pF

3

3.6

Ω

SWITCHING PARAMETERS

Qg(10V) Total Gate Charge

13.84 16.6 nC

Qg

Total Gate Charge

Qgs

Gate Source Charge

VGS=4.5V, VDS=15V, ID=7.5A

6.74 8.1 nC

1.82

nC

Qgd

Gate Drain Charge

3.2

nC

tD(on)

Turn-On DelayTime

4.6

ns

tr

tD(off)

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=2.0Ω,

4.1

ns

RGEN=6Ω

20.6

ns

tf

Turn-Off Fall Time

5.2

ns

trr

Body Diode Reverse Recovery time IF=7.5A, dI/dt=100A/µs

16.5 20

ns

Qrr

Body Diode Reverse Recovery charge IF=7.5A, dI/dt=100A/µs

7.8

nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value

in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

curve provides a single pulse rating.

Rev 4 : Sept 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

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