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AOP600L 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor

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AOP600L
AOSMD
Alpha and Omega Semiconductor AOSMD
AOP600L Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
AOP600
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP600 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AOP600 is Pb-free (meets ROHS
& Sony 259 specifications). AOP600L is a Green
Product ordering option. AOP600 and AOP600L are
electrically identical.
Features
n-channel
p-channel
VDS (V) = 30V
-30V
ID = 7.5A (VGS = 10V) -6.6A
RDS(ON)
< 28m
< 35m(VGS = -10V)
< 43m
< 58m(VGS =- 4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
PDIP-8
D2
D1
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain
TA=25°C
7.5
Current A
TA=70°C
ID
6
Pulsed Drain Current B
IDM
30
Power Dissipation
TA=25°C
TA=70°C
PD
2.5
1.6
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-6.6
-5.3
-30
2.5
1.6
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t 10s
Steady-State
RθJA
40
67
50
80
Maximum Junction-to-Lead C
Steady-State
RθJL
33
40
Thermal Characteristics: p-channel
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t 10s
Steady-State
RθJA
38
66
50
80
Maximum Junction-to-Lead C
Steady-State
RθJL
30
40
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

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