BT132-500D 데이터 시트보기 (PDF) - NXP Semiconductors.
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BT132-500D Datasheet PDF : 8 Pages
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1;3 Semiconductors
Triacs
logic level
Product specification
BT132 series D
1.4 Ptot / W
1.2
1
0.8
0.6
0.4
BT132D
1
Tmb(max) / C
41
=180 53
120
65
90
77
60
89
30
101
0.2
113
00
125
0
0.2
0.4
0.6
0.8
1
1.2
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000 ITSM / A
100
BT132D
IT
ITSM
T
time
Tj initial = 25 C max
dI T/dt limit
T2- G+ quadrant
10
10us
100us
1ms
T/s
10ms
100ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
ITSM / A
20
15
10
BT136
IT
ITSM
T
time
Tj initial = 25 C max
5
0
10
100
1000
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
IT(RMS) / A
1.2
1
BT132D
51 C
0.8
0.6
0.4
0.2
0-50
0
50
100
150
Tmb / C
Fig.4. Maximum permissible rms current IT(RMS) ,
versus lead temperature Tlead.
3 IT(RMS) / A
BT132D
2.5
24
1.5
1
0.5
0
0.01
0.1
1
10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tlead ≤ 51˚C.
VGT(Tj)
1.6 VGT(25 C)
BT136
1.4
1.2
1
0.8
0.6
0.4-50
0
50
100
150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
January 1998
3
Rev 1.000
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