BT132-500D 데이터 시트보기 (PDF) - NXP Semiconductors.
부품명
상세내역
일치하는 목록
BT132-500D Datasheet PDF : 8 Pages
| |||
NXP Semiconductors
Triacs
logic level
Product specification
BT132 series D
GENERAL DESCRIPTION
Glass passivated, sensitive gate
triacs in a plastic envelope, intended
for use in general purpose
bidirectional switching and phase
control applications. These devices
are intended to be interfaced directly
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. UNIT
VDRM
IT(RMS)
ITSM
BT132- 500D 600D
Repetitive peak off-state voltages
500 600 V
RMS on-state current
1
1A
Non-repetitive peak on-state current 16 16 A
PINNING - TO92
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1 main terminal 2
2 gate
T2
T1
3 main terminal 1
3 21
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state
-
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; Tlead ≤51 ˚C
-
full sine wave; Tj = 25 ˚C prior to
surge
t = 20 ms
-
t = 16.7 ms
-
I2t for fusing
t = 10 ms
-
Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A;
on-state current after
dIG/dt = 0.2 A/μs
triggering
T2+ G+
-
T2+ G-
-
T2- G-
-
T2- G+
-
Peak gate current
-
Peak gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
-500
5001
-600
6001
1
16
17.6
1.28
50
50
50
10
2
5
5
0.5
150
125
UNIT
V
A
A
A
A2s
A/μs
A/μs
A/μs
A/μs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/μs.
January 1998
1
Rev 1.000
Share Link: 