TLP130(2002) 데이터 시트보기 (PDF) - Toshiba

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TLP130
(Rev.:2002)

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

Toshiba 

Individual Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Forward voltage

Capacitance

Collector-emitter

breakdown voltage

Emitter-collector

breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector dark current

Collector dark current

Collector dark current

DC forward current gain

Capacitance collector to emitter

VF

IF = ±10mA

CT

V = 0, f = 1MHz

V(BR)CEO IC = 0.5mA

V(BR)ECO IE = 0.1mA

V(BR)CBO IC = 0.1mA

V(BR)EBO IE = 0.1mA

ICEO

VCE = 48V

VCE = 48V, Ta = 85°C

ICER

VCE = 48V, Ta = 85°C

RBE = 1MΩ

ICBO VCB = 10V

hFE VCE = 5V, IC = 0.5mA

CCE V = 0 , f = 1MHz

TLP130

Min. Typ. Max. Unit

1.0 1.15 1.3

V

―

60

―

pF

80

―

―

V

7

―

―

V

80

―

―

V

7

―

―

V

―

10

100

nA

―

2

50

µA

―

0.5

10

µA

―

0.1

―

nA

―

400

―

―

―

10

―

pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Current transfer ratio

Saturated CTR

Base photo-current

Collector-emitter

saturation voltage

Off-state collector current

CTR symmetry

Symbol

Test Condition

Min.

IC / IF

IC / IF(sat)

IPB

VCE(sat)

IC(off)

IC(ratio)

IF = ±5mA, VCE = 5V

Rank GB

IF = ±1mA, VCE = 0.4V

Rank GB

IF = ±5mA, VCB = 5V

IC = 2.4mA, IF = ±8mA

IC = 0.2mA, IF = ±1mA

Rank GB

IF = ±0.7mA, VCE = 48V

IC(IF = -5mA) / IC(IF = 5mA)

(Note 2)

50

100

―

30

―

―

―

―

―

0.33

Typ. Max. Unit

―

600

%

―

600

60

―

%

―

―

10

―

µA

―

0.4

0.2

―

V

―

0.4

1

10

µA

―

3

―

(Note 2) IC(ratio) =

IC2(IF = IF2, VCE = 5V)

IC1(IF = IF1, VCE = 5V)

IF1

IF2

IC1

VCE

IC2

3

2002-09-25

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