TLP130(2002) 데이터 시트보기 (PDF) - Toshiba

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TLP130
(Rev.:2002)

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

Toshiba 

TLP130

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Forward current

Forward current derating (Ta≥53°C)

Peak forward current (100µs pulse,100pps)

Junction temperature

Collector-emitter voltage

Collector-base voltage

Emitter-collector voltage

Emitter-base voltage

Collector current

Peak collector current (10ms pulse,100pps)

Power dissipation

Power dissipation derating (Ta≥25°C)

Junction temperature

Storage temperature range

Operating temperature range

Lead soldering temperature (10s)

Total package power dissipation

Total package power dissipation derating (Ta≥25°C)

Isolation voltage (AC, 1min., RH ≤ 60%)

IF(RMS)

∆IF / °C

IFP

Tj

VCEO

VCBO

VECO

VEBO

IC

ICP

PC

∆PC / °C

Tj

Tstg

Topr

Tsol

(Note 1)

PT

∆PT / °C

BVS

50

-0.7

1

125

80

80

7

7

50

100

150

-1.5

125

-55~125

-55~100

260

200

-2.0

3750

mA

mA / °C

A

°C

V

V

V

V

mA

mA

mW

mW / °C

°C

°C

°C

°C

mW

mW / °C

Vrms

(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted

together.

Recommended Operating Conditions

Characteristic

Supply voltage

Forward current

Collector current

Operating temperature

Symbol

VCC

IF(RMS)

IC

Topr

Min. Typ. Max. Unit

―

5

48

V

―

16

25

mA

―

1

10

mA

-25

―

85

°C

2

2002-09-25

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