BZV55-B10(2007) 데이터 시트보기 (PDF) - NXP Semiconductors.
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BZV55-B10 Datasheet PDF : 12 Pages
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NXP Semiconductors
BZV55 series
Voltage regulator diodes
Table 8. Characteristics per type; BZV55-B2V4 to BZV55-C24 …continued
Tj = 25 °C unless otherwise specified.
BZV55-x Sel Working
Differential resistance
Temperature
xx
voltage
rdif (Ω)
VZ (V)
coefficient
SZ (mV/K)
IZ = 5 mA
IZ = 1 mA IZ = 5 mA IZ = 5 mA
Min Max Typ Max Typ Max Min Typ Max
13
B
12.7 13.3 50 170 10 30 7.0 9.4 11.0
C
12.4 14.1
15
B
14.7 15.3 50 200 10 30 9.2 11.4 13.0
C
13.8 15.6
16
B
15.7 16.3 50 200 10 40 10.4 12.4 14.0
C
15.3 17.1
18
B
17.6 18.4 50 225 10 45 12.4 14.4 16.0
C
16.8 19.1
20
B
19.6 20.4 60 225 15 55 12.3 15.6 18.0
C
18.8 21.2
22
B
21.6 22.4 60 250 20 55 14.1 17.6 20.0
C
20.8 23.3
24
B
23.5 24.5 60 250 25 70 15.9 19.6 22.0
C
22.8 25.6
Diode
capacitance
Cd (pF)[1]
Max
80
75
75
70
60
60
55
Non-repetitive
peak reverse
current
IZSM (A)[2]
Max
2.5
2.0
1.5
1.5
1.5
1.25
1.25
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge
BZV55_SER_4
Product data sheet
Rev. 04 — 19 July 2007
© NXP B.V. 2007. All rights reserved.
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