BZV55-B10(2007) 데이터 시트보기 (PDF) - NXP Semiconductors.
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BZV55-B10 Datasheet PDF : 12 Pages
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NXP Semiconductors
BZV55 series
Voltage regulator diodes
Table 8. Characteristics per type; BZV55-B2V4 to BZV55-C24
Tj = 25 °C unless otherwise specified.
BZV55-x Sel
xx
Working
voltage
VZ (V)
Differential resistance
rdif (Ω)
Temperature
coefficient
SZ (mV/K)
IZ = 5 mA
Min Max
2V4
B
2.35 2.45
C
2.2
2.6
2V7
B
2.65 2.75
C
2.5
2.9
3V0
B
2.94 3.06
C
2.8
3.2
3V3
B
3.23 3.37
C
3.1
3.5
3V6
B
3.53 3.67
C
3.4
3.8
3V9
B
3.82 3.98
C
3.7
4.1
4V3
B
4.21 4.39
C
4.0
4.6
4V7
B
4.61 4.79
C
4.4
5.0
5V1
B
5.0
5.2
C
4.8
5.4
5V6
B
5.49 5.71
C
5.2
6.0
6V2
B
6.08 6.32
C
5.8
6.6
6V8
B
6.66 6.94
C
6.4
7.2
7V5
B
7.35 7.65
C
7.0
7.9
8V2
B
8.04 8.36
C
7.7
8.7
9V1
B
8.92 9.28
C
8.5
9.6
10
B
9.8
10.2
C
9.4
10.6
11
B
10.8 11.2
C
10.4 11.6
12
B
11.8 12.2
C
11.4 12.7
BZV55_SER_4
Product data sheet
IZ = 1 mA IZ = 5 mA IZ = 5 mA
Typ Max Typ Max Min Typ Max
275 600 70 100 −3.5 −1.6 0
300 600 75 100 −3.5 −2.0 0
325 600 80 95 −3.5 −2.1 0
350 600 85 95 −3.5 −2.4 0
375 600 85 90 −3.5 −2.4 0
400 600 85 90 −3.5 −2.5 0
410 600 80 90 −3.5 −2.5 0
425 500 50 80 −3.5 −1.4 0.2
400 480 40 60 −2.7 −0.8 1.2
80 400 15 40 −2.0 1.2 2.5
40 150 6
10 0.4 2.3 3.7
30 80 6
15 1.2 3.0 4.5
30 80 6
15 2.5 4.0 5.3
40 80 6
15 3.2 4.6 6.2
40 100 6
15 3.8 5.5 7.0
50 150 8
20 4.5 6.4 8.0
50 150 10 20 5.4 7.4 9.0
50 150 10 25 6.0 8.4 10.0
Rev. 04 — 19 July 2007
Diode
capacitance
Cd (pF)[1]
Non-repetitive
peak reverse
current
IZSM (A)[2]
Max
Max
450
6.0
450
6.0
450
6.0
450
6.0
450
6.0
450
6.0
450
6.0
300
6.0
300
6.0
300
6.0
200
6.0
200
6.0
150
4.0
150
4.0
150
3.0
90
3.0
85
2.5
85
2.5
© NXP B.V. 2007. All rights reserved.
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