BLV57 데이터 시트보기 (PDF) - Philips Electronics
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BLV57 Datasheet PDF : 24 Pages
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Philips Semiconductors
UHF linear push-pull power transistor
Product specification
BLV57
CHARACTERISTICS apply to either transistor section unless otherwise specified
Tj = 25°C
Collector-emitter breakdown voltage
VBE = 0; IC = 10 mA
open base; IC = 25 mA
Emitter-base breakdown voltage
V(BR)CES
〉
V(BR)CEO
〉
open collector; IE = 5 mA
Collector cut-off current
V(BR)EBO
〉
VBE = 0; VCE = 27 V
Second breakdown energy; L = 25 mH; f = 50 Hz
ICES
〈
open base
RBE = 10 Ω
D.C. current gain(1)
IC = 0,85 A; VCE = 25 V
ESBO
〉
ESBR
〉
hFE
〉
typ.
50 V
27 V
3,5 V
10 mA
2 mJ
2 mJ
15
40
D.C. current gain ratio of transistor sections
IC = 0,85 A; VCE = 25 V
Collector-emitter saturation voltage(1)
IC = 1,7 A; IB = 0,17 A
Transition frequency at f = 100 MHz(2)
−IE = 0,85 A; VCB = 25 V
−IE = 1,7 A; VCB = 25 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 25 V
VCEsat
fT
fT
Cc
0,67 to 1,5
typ. 0,75 V
typ.
2,5 GHz
typ.
2,5 GHz
typ.
24 pF
〈
30 pF
Feedback capacitance at f = 1 MHz
IC = 50 mA; VCE = 25 V
Collector-flange capacitance
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.
Cre
typ.
15 pF
Ccf
typ.
2 pF
The graphs apply to either transistor section.
1998 Feb 09
6
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