Philips Semiconductors
UHF linear push-pull power transistor
Product specification
BLV57
handbook1,0h0alfpage
Ptot
(W)
75
50
25
MGP359
ΙΙ
Ι
0
0
50
Th (°C)
100
I Continuous d.c. (including r.f. class-A) operation
II Continuous r.f. operation
Dissipation of either transistor section should not exceed half rated dissipation.
Fig.3 Power derating curves vs. temperature.(1)
THERMAL RESISTANCE
(dissipation = 42 W; Tmb = 80,5 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
Rth j−mb(dc)
=
Rth j−mb(rf)
=
Rth mb−h
=
2,43 K/W
1,91 K/W
0,25 K/W
1998 Feb 09
4