MMBT4403LT1(2001) 데이터 시트보기 (PDF) - ON Semiconductor
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MMBT4403LT1 Datasheet PDF : 8 Pages
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MMBT4403LT1
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = –10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
10
10
f = 1 kHz
8
8
6
IC = 1.0 mA, RS = 430 Ω
IC = 500 µA, RS = 560 Ω
IC = 50 µA, RS = 2.7 kΩ
4
IC = 100 µA, RS = 1.6 kΩ
6
IC = 50 µA
100 µA
4
500 µA
1.0 mA
2
RS = OPTIMUM SOURCE RESISTANCE
2
0
0.01 0.02
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
Figure 8. Frequency Effects
50 100
h PARAMETERS
VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
hfe and other “h” parameters for this series of transistors. To
1000
700
500
300
200
MMBT4403LT1 UNIT 1
100
MMBT4403LT1 UNIT 2
70
50
30
0.1
20
10
5.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
5.0 7.0 10
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
2.0
1.0
0.5
0.2
0.1
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
0
50 100 200
500 1Ăk 2Ăk
5Ăk 10Ăk 20Ăk 50Ăk
RS, SOURCE RESISTANCE (OHMS)
Figure 9. Source Resistance Effects
obtain these curves, a high–gain and a low–gain unit were
selected from the MMBT4403LT1 lines, and the same units
were used to develop the correspondingly–numbered curves
on each graph.
100Ăk
50Ăk
20Ăk
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
10Ăk
5Ăk
2Ăk
1Ăk
500
200
100
0.1
500
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
Figure 11. Input Impedance
100
50
20
10
5.0
2.0
1.0
0.1
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
Figure 13. Output Admittance
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