MMBT4403LT1(2001) 데이터 시트보기 (PDF) - ON Semiconductor
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MMBT4403LT1 Datasheet PDF : 8 Pages
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ON Semiconductort
Switching Transistor
PNP Silicon
MMBT4403LT1
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT4403LT1 = 2T
Symbol
VCEO
VCBO
VEBO
IC
Value
–40
–40
–5.0
–600
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
–55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = –0.1 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = –0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = –35 Vdc, VEB = –0.4 Vdc)
Collector Cutoff Current
(VCE = –35 Vdc, VEB = –0.4 Vdc)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236)
COLLECTOR
3
1
BASE
2
EMITTER
Min
Max
Unit
Vdc
–40
—
Vdc
–40
—
Vdc
–5.0
—
µAdc
—
–0.1
µAdc
—
–0.1
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 1
Publication Order Number:
MMBT4403LT1/D
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