GS820H32AT-150 데이터 시트보기 (PDF) - Giga Semiconductor

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GS820H32AT-150

64K x 32 2M Synchronous Burst SRAM

Giga Semiconductor 

Operating Currents

Parameter

Test Conditions

Operating

Current

Standby

Current

Deselect

Current

Device Selected;

All other inputs

≥VIH or ≤ VIL

Output open

ZZ ≥ VDD - 0.2V

Device Deselected;

All other inputs

≥ VIH or ≤ VIL

Operating Currents

Parameter

Test Conditions

Operating

Current

Standby

Current

Deselect

Current

Device Selected;

All other inputs

≥VIH or ≤ VIL

Output open

ZZ ≥ VDD - 0.2V

Device Deselected;

All other inputs

≥ VIH or ≤ VIL

GS820H32AT/Q-150/138/133/117/100/66

Symbol

IDD

Pipeline

IDD

Flow-Thru

ISB

Flow-Thru

IDD

Pipeline

IDD

Flow-Thru

-150

0 to 70°C -40 to

85°C

270mA 275mA

170mA 175mA

10mA 15mA

90mA 95mA

45mA 50mA

-138

0 to 70°C -40 to

85°C

245mA 250mA

120mA 125mA

10mA 15mA

80mA 85mA

40mA 45mA

-133

0 to 70°C -40 to

85°C

240mA 245mA

120mA 125mA

10mA 15mA

80mA 85mA

40mA 45mA

Symbol

IDD

Pipeline

IDD

Flow-Thru

ISB

Flow-Thru

IDD

Pipeline

IDD

Flow-Thru

-117

0 to 70°C -40 to

85°C

210mA 215mA

120mA 125mA

10mA 15mA

70mA 75mA

40mA 45mA

-100

0 to 70°C -40 to

85°C

180mA 185mA

120mA 125mA

10mA 15mA

60mA 65mA

40mA 45mA

-66

0 to 70°C -40 to

85°C

150mA 155mA

95mA 100mA

10mA 15mA

50mA 55mA

40mA 45mA

Rev: 1.04 3/2000

12/23

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2000, Giga Semiconductor, Inc.

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