BGA425 데이터 시트보기 (PDF) - Infineon Technologies

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BGA425

Si-MMIC-Amplifier in SIEGET 25-Technologie

Infineon Technologies 

BGA 425

Electrical characteristics at TA = 25 °C, unless otherwise specified.

VD = 3 V

Application 1 to 4

Applic.

Insertion Gain

|S21|2 (dB)

Frequ. (GHz)

Noise Figure Reverse Isol.

NF (dB)

S12 (dB)

Frequ. (GHz) Frequ. (GHz)

Return Loss Return Loss

Input RLin (dB) Output RLout (dB)

Frequ. (GHz) Frequ. (GHz)

0.1 1 1.8 0.1 1 1.8 0.1 1 1.8 0.1 1 1.8 0.1 1 1.8

1 (LNA) 27 22 18.5 1.9 2 2.2 46 32 28 19 19 18 10 12 13

2 (LNA) 10 22 22 - 1.9 2.1 35 35 37 13 15 8 5 10 11 *)

3 (LNA) 24 20 16 1.9 2 2.2 34 30 26 8 10 14 15 17 11

4 (MIX)

e.g.: RF = 900 MHz, IF = 100 MHz, VD = 3 V

Conversion gain: 20 dB

Intercept point output: 0 dBm

Noise figure: < 5 dB

LO-power: +3 dBm

*) 2.2 pF by-pass capacitance and 100 nH bias-inductance

4

Oct-12-1999

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