BGA425 데이터 시트보기 (PDF) - Infineon Technologies
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BGA425 Datasheet PDF : 8 Pages
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BGA 425
Si-MMIC-Amplifier in SIEGET 25-Technologie
Multifunctional casc. 50 block (LNA / MIX)
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1)
gain |S21|2 = 22 dB at 1.8 GHz (Appl.2)
IP3out = +7 dBm at 1.8 GHz (VD=3V,ID=9.5mA)
Noise figure NF = 2.2 dB at 1.8 GHz
Reverse isolation >28 dB (appl.1) >35 dB (Appl.2)
Typical device voltage VD = 2 V to 5 V
Tape loading orientation
Top View
654
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
W1s
123
Direction of Unreeling
Position in tape: pin 1
opposite of feed hole side
IN
EHA07193
ESD: Electrostatic discharge sensitive device,
observe handling precaution!
4
5
6
3
2
1
VPS05604
Circuit Diagram
6
+V
3
OUTA
1
OUTB
4
2, 5
GND
EHA07371
Type
Marking
Pin Configuration
BGA 425 BMs
1,OutB 2,GND 3,OutA 4,IN 5,GND 6,+V
Package
SOT-363
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, TS = 120 °C 1)
RF input power
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Symbol
ID
VD,+V
Ptot
PRFin
Tj
TA
Tstg
RthJS
Value
25
6
150
-10
150
-65 ... 150
-65 ... 150
335
Unit
mA
V
mW
dBm
°C
K/W
1TS is measured on the ground lead at the soldering point to the pcb
1
Oct-12-1999
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