DG408BP45 데이터 시트보기 (PDF) - Dynex Semiconductor
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DG408BP45 Datasheet PDF : 19 Pages
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DG408BP45
4000
3500
Conditions:
CS = 1.0µF,
IT = 1000A
3000
2500
Tj = 125°C
2000
Tj = 25°C
1500
10
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
1000
750
Conditions:
VD = 66% VDRM
Tj = 125°C
500
250
0
0.1
1
10
100
Gate cathode resistance RGK - (Ohms)
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
1000
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